IRFR024NTRPBF vs IRF8714TRPBF 对比

详细并排对比 IRFR024NTRPBF 出自 Infineon 和 IRF8714TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF ✓ 量产中

规格对比

参数 IRFR024NTRPBF IRF8714TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.31 $0.66
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
晶体管类型 N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
工作结温 -55 C to +175 C —
封装 TO-252-3 (DPAK, SC-63), surface mount SO-8 (8-SOIC)
安装类型 Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
MSL 等级 1 (per JEDEC J-STD-020) 1 (per Infineon package qualification)
FET Type — N-Channel
Technology — HEXFET / StrongIRFET (planar MOSFET)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 14 A
On-State Resistance (RDS(on)) max at VGS=10V — 8.7 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical range]
Gate Charge (Qg) typical — 8.1 nC
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation (PD) at TA=25C — 2.5 W
工作温度范围 — -55C to +150C (junction)
引脚数量 — 8
Avalanche Rated — Yes
Lead-Free / RoHS — Lead-Free / RoHS Compliant

数据手册与资源

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