IRFR024NTRPBF vs IRF8714TRPBF 비교
다음의 상세 나란히 비교: IRFR024NTRPBF 제조: Infineon 및 IRF8714TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR024NTRPBF | IRF8714TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.31 | $0.66 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Series | HEXFET Power MOSFET (5th generation) | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Maximum Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) | — |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Typical Gate Charge (Qg) | 13.3 nC | — |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) | — |
| 동작 접합 온도 | -55 C to +175 C | — |
| 패키지 | TO-252-3 (DPAK, SC-63), surface mount | SO-8 (8-SOIC) |
| 실장 유형 | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 (per Infineon package qualification) |
| FET Type | — | N-Channel |
| Technology | — | HEXFET / StrongIRFET (planar MOSFET) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 8.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical range] |
| Gate Charge (Qg) typical | — | 8.1 nC |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| 동작 온도 범위 | — | -55C to +150C (junction) |
| 핀 수 | — | 8 |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |