IRFR1205TRPBF vs IRFR120NTRLPBF 对比

详细并排对比 IRFR1205TRPBF 出自 Infineon 和 IRFR120NTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR1205TRPBF IRFR120NTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $0.62
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET, 5th generation) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 55 V 100 V
Continuous Drain Current (ID) at TC=25C 44 A 9.4 A
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC 16.7 nC
Power Dissition (PD) at TC=25C 107 W —
工作结温 -55C to +175C —
封装 TO-252AA (DPAK) PG-TO252-3 (DPAK)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix = lead-free) Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Power Dissipation (PD) at TC=25C — 48 W
工作结温范围 — -55C to +175C
Avalanche Energy Rated — Yes (fully avalanche rated)
Lead-Free Finish — Yes (Pb-free)

数据手册与资源

浏览全部产品 创建 BOM 获取报价