IRFR1205TRPBF vs IRFR120NTRLPBF Comparison

Detailed side-by-side comparison of IRFR1205TRPBF by Infineon and IRFR120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR1205TRPBF IRFR120NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.62
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET, 5th generation) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 55 V 100 V
Continuous Drain Current (ID) at TC=25C 44 A 9.4 A
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 27 mOhm max β€”
Total Gate Charge (Qg) 43.3 nC 16.7 nC
Power Dissition (PD) at TC=25C 107 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix = lead-free) Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] β€”
On-Resistance RDS(on) max at VGS=10V β€” 210 mΞ©
Power Dissipation (PD) at TC=25C β€” 48 W
Operating Junction Temperature Range β€” -55C to +175C
Avalanche Energy Rated β€” Yes (fully avalanche rated)
Lead-Free Finish β€” Yes (Pb-free)

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