IRFR3411TRPBF vs IRLR3110ZTRPBF 对比
详细并排对比 IRFR3411TRPBF 出自 Infineon 和 IRLR3110ZTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR3411TRPBF | IRLR3110ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.55 | $0.66 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | 14 mOhm |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | — |
| 工作温度范围 | -55 C to +175 C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET / Trench MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 15 nC |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| 工作结温 | — | -55C to +175C |
| MSL 等级 | — | 1 (Unlimited) |
| RoHS 状态 | — | Compliant |
| Lead-Free Plating | — | Yes (PBF suffix) |
| 无卤 | — | Yes |