IRFR3411TRPBF vs IRLR3110ZTRPBF Comparison
Detailed side-by-side comparison of IRFR3411TRPBF by Infineon and IRLR3110ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3411TRPBF | IRLR3110ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.66 |
| Polarity | N-Channel | β |
| FET Type | MOSFET (Metal Oxide) | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | β |
| RDS(on) max @ VGS=10V | 44 mOhm | 14 mOhm |
| Continuous Drain Current (Id) @ Tc | 32 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (Pd) @ Tc | 130 W | β |
| Gate Charge (Qg) | 48 nC | β |
| Operating Mode | Enhancement | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Technology | HEXFET Power MOSFET (IR) | HEXFET / Trench MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| dv/dt Rating | Dynamic dv/dt rated | β |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | β |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 42 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | β | 15 nC |
| Power Dissipation (PD) at TC=25C | β | 140 W |
| Operating Junction Temperature | β | -55C to +175C |
| MSL Level | β | 1 (Unlimited) |
| RoHS Status | β | Compliant |
| Lead-Free Plating | β | Yes (PBF suffix) |
| Halogen-Free | β | Yes |