IRFR3806TRPBF vs IRFR4620TRLPBF 对比

详细并排对比 IRFR3806TRPBF 出自 Infineon 和 IRFR4620TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR3806TRPBF IRFR4620TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.52 $1.72
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC —
Power Dissipation (Pd) at Tc = 25 C 71 W —
封装 / 外壳 TO-252AA (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) IR MOSFET
工作温度范围 -55 C to +175 C —
Gate-Source Voltage (VGS) max +/- 20 V —
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) —
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
工作温度 — -55C to +175C
Lead Free — Yes
RoHS 状态 — Compliant
MSL 等级 — 1 (Unlimited)

数据手册与资源

浏览全部产品 创建 BOM 获取报价