IRFR5305TRLPBF vs IRFR5410TRPBF 对比

详细并排对比 IRFR5305TRLPBF 出自 Infineon 和 IRFR5410TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR5305TRLPBF IRFR5410TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.71
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V ±20 V
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
工作结温 -55C to +175C —
封装 TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (advanced process, Gen 5)
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Polarity — P-Channel
Continuous Drain Current (ID) at TC = 25 °C — -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V — 205 mΩ
Total Gate Charge (Qg) typ — 70 nC
Power Dissition (PD) at TC = 25 °C — 66 W
工作温度范围 — -55 °C to +150 °C (TJ)
Lead-Free / RoHS Status — Lead-free, RoHS compliant (PBF suffix)
MSL 等级 — [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions — VGS = -10 V, ID = -7.0 A

数据手册与资源

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