IRFR5305TRLPBF vs IRFR5410TRPBF Comparison

Detailed side-by-side comparison of IRFR5305TRLPBF by Infineon and IRFR5410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5305TRLPBF IRFR5410TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.71
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID) at Tc=25C -31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max Β±20 V Β±20 V
RDS(on) max at VGS=-10V 65 mΞ© β€”
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (advanced process, Gen 5)
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") β€”
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) β€”
Polarity β€” P-Channel
Continuous Drain Current (ID) at TC = 25 Β°C β€” -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V β€” 205 mΞ©
Total Gate Charge (Qg) typ β€” 70 nC
Power Dissition (PD) at TC = 25 Β°C β€” 66 W
Operating Temperature Range β€” -55 Β°C to +150 Β°C (TJ)
Lead-Free / RoHS Status β€” Lead-free, RoHS compliant (PBF suffix)
MSL Level β€” [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions β€” VGS = -10 V, ID = -7.0 A

Datasheets & Resources

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