IRFR5410TRPBF vs BSC060P03NS3EGATMA1 对比
详细并排对比 IRFR5410TRPBF 出自 Infineon 和 BSC060P03NS3EGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ 量产中规格对比
| 参数 | IRFR5410TRPBF | BSC060P03NS3EGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $0.38 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -30 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| 封装 | TO-252AA (DPAK), surface mount | PG-TDSON-8-1 (SuperSO8 5x6) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| 工作温度范围 | -55 °C to +150 °C (TJ) | -55°C to +150°C |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | OptiMOS™ P-channel Trench |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Continuous Drain Current (Ta) | — | 17.7 A |
| Continuous Drain Current (Tc) | — | 100 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 6 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | -2.5 V |
| Total Gate Charge Qg @ VGS=10V | — | 81 nC |
| Input Capacitance Ciss | — | 6.02 nF |
| Output Capacitance Coss | — | 2.81 nF |
| Reverse Transfer Capacitance Crss | — | 220 pF |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 83 W |
| RoHS 状态 | — | Compliant |