IRLR3110ZTRPBF vs IRFR3411TRPBF 对比
详细并排对比 IRLR3110ZTRPBF 出自 Infineon 和 IRFR3411TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3110ZTRPBF | IRFR3411TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.66 | $0.55 |
| FET Type | N-Channel | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10V | 14 mOhm | 44 mOhm |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | HEXFET Power MOSFET (IR) |
| MSL 等级 | 1 (Unlimited) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free Plating | Yes (PBF suffix) | — |
| 无卤 | Yes | — |
| Polarity | — | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 100 V |
| Continuous Drain Current (Id) @ Tc | — | 32 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | — | 130 W |
| Gate Charge (Qg) | — | 48 nC |
| Operating Mode | — | Enhancement |
| Maximum Junction Temperature | — | 175 C |
| 工作温度范围 | — | -55 C to +175 C |
| 引脚数 | — | 3 |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Lead-Free / RoHS | — | Yes (Lead-free, PBF suffix) |