IRLR3110ZTRPBF vs IRFR3411TRPBF Comparison
Detailed side-by-side comparison of IRLR3110ZTRPBF by Infineon and IRFR3411TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3110ZTRPBF | IRFR3411TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.55 |
| FET Type | N-Channel | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 42 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max @ VGS=10V | 14 mOhm | 44 mOhm |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | 15 nC | β |
| Power Dissipation (PD) at TC=25C | 140 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | HEXFET Power MOSFET (IR) |
| MSL Level | 1 (Unlimited) | β |
| RoHS Status | Compliant | β |
| Lead-Free Plating | Yes (PBF suffix) | β |
| Halogen-Free | Yes | β |
| Polarity | β | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 100 V |
| Continuous Drain Current (Id) @ Tc | β | 32 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | β | 130 W |
| Gate Charge (Qg) | β | 48 nC |
| Operating Mode | β | Enhancement |
| Maximum Junction Temperature | β | 175 C |
| Operating Temperature Range | β | -55 C to +175 C |
| Number of Pins | β | 3 |
| Avalanche Rated | β | Yes (fully avalanche rated) |
| dv/dt Rating | β | Dynamic dv/dt rated |
| Lead-Free / RoHS | β | Yes (Lead-free, PBF suffix) |