IRLR3410TRRPBF vs IRLR3410TRLPBF 对比
详细并排对比 IRLR3410TRRPBF 出自 Infineon 和 IRLR3410TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3410TRRPBF | IRLR3410TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.58 | $0.65 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 17 A | — |
| Power Dissipation (PD, Tc=25C) | 79 W | — |
| On-Resistance (RDS(on) max at VGS=10V) | 105 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1 V (at 250 uA) | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Technology | IR HEXFET (IR MOSFET process) | HEXFET (5th generation) N-Channel MOSFET |
| 封装 | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount (tape and reel) |
| Packaging Style | Tape & Reel Right (TRR) | — |
| Avalanche Rated | Yes | Yes (UIS tested) |
| 工作温度范围 | -55C to +175C (junction) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| 工作结温 | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |