IRLR3410TRRPBF vs IRLR3410TRLPBF Comparison
Detailed side-by-side comparison of IRLR3410TRRPBF by Infineon and IRLR3410TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3410TRRPBF | IRLR3410TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 17 A | — |
| Power Dissipation (PD, Tc=25C) | 79 W | — |
| On-Resistance (RDS(on) max at VGS=10V) | 105 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1 V (at 250 uA) | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Technology | IR HEXFET (IR MOSFET process) | HEXFET (5th generation) N-Channel MOSFET |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount (tape and reel) |
| Packaging Style | Tape & Reel Right (TRR) | — |
| Avalanche Rated | Yes | Yes (UIS tested) |
| Operating Temperature Range | -55C to +175C (junction) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| Operating Junction Temperature | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |