IRS2011STRPBF vs IR21834STRPBF 对比

详细并排对比 IRS2011STRPBF 出自 Infineon 和 IR21834STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中
Infineon
IR21834STRPBF IR21834STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR21834STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR21834STRPBF ✓ 量产中

规格对比

参数 IRS2011STRPBF IR21834STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $1.05
功能 Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels Half-Bridge
输出数量 2 2 (High Side / Low Side)
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V and 5 V
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune Yes
封装 8-SOIC (DSO-8) 14-SOIC (3.90 mm width)
工作温度 -40 C to +125 C -40 C to +125 C
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
Input Type — Inverting, Non-Inverting
Number of Drivers — 2
Peak Source Current — 1.9 A
Peak Sink Current — 2.3 A
Maximum Floating Supply Voltage — 600 V
Propagation Delay — 180 ns (typical)
Undervoltage Lockout — Yes (both channels)
dV/dt Immunity — Yes
Packaging — Tape & Reel

数据手册与资源

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