IRS2011STRPBF vs IR21834STRPBF Comparison

Detailed side-by-side comparison of IRS2011STRPBF by Infineon and IR21834STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF βœ“ Active
Infineon
IR21834STRPBF

IR21834STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR21834STRPBF βœ“ Active

Specification Comparison

Parameter IRS2011STRPBF IR21834STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.05
Function Half-Bridge Gate Driver β€”
Configuration High-Side and Low-Side, Independent Channels Half-Bridge
Number of Outputs 2 2 (High Side / Low Side)
Maximum Offset Voltage (High-Side) 200 V β€”
Output Current (Source / Sink) 1 A typical / 1 A typical β€”
Propagation Delay (ton/toff) 60 ns typical β€”
Delay Matching 20 ns maximum β€”
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V and 5 V
Bootstrap Supply Integrated bootstrap diode, floating channel β€”
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune Yes
Package 8-SOIC (DSO-8) 14-SOIC (3.90 mm width)
Operating Temperature -40 C to +125 C -40 C to +125 C
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs β€”
Input Type β€” Inverting, Non-Inverting
Number of Drivers β€” 2
Peak Source Current β€” 1.9 A
Peak Sink Current β€” 2.3 A
Maximum Floating Supply Voltage β€” 600 V
Propagation Delay β€” 180 ns (typical)
Undervoltage Lockout β€” Yes (both channels)
dV/dt Immunity β€” Yes
Packaging β€” Tape & Reel

Datasheets & Resources

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