IRS2110STRPBF vs IR2110SPBF 对比

详细并排对比 IRS2110STRPBF 出自 Infineon 和 IR2110SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2110STRPBF IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF ✓ 量产中

规格对比

参数 IRS2110STRPBF IR2110SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.42 $1.98
Driver Configuration Half-Bridge —
Number of Drivers 2 (High-Side and Low-Side) —
输出数量 2 —
输出类型 Non-Inverting —
Maximum Offset Voltage 500 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Source/Sink Output Current (typ.) 2.5 A / 2.5 A —
Propagation Delay ton/toff (typ.) 30 ns / 30 ns —
Rise/Fall Time (typ.) 17 ns / 25 ns —
Logic Input Compatibility CMOS/TTL compatible (3.3 V logic compatible) 3.3 V CMOS / LSTTL
Bootstrap Diode Integrated Integrated
Shutdown Input Active-low, forces both outputs low —
Undervoltage Lockout Yes (VCC and VBS) —
工作温度 -40 C to +150 C —
封装 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel 16-pin SOIC (SO-16, DW suffix)
安装类型 Surface Mount Surface Mount
MSL 等级 3 (168 hours) —
Lead-Free / RoHS Lead-Free, RoHS Compliant Yes / Compliant (Pb-free PBF suffix)
功能 — Half-bridge gate driver
拓扑 — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
工作温度范围 — -40 C to +125 C
Technology — HVIC + latch-immune CMOS

数据手册与资源

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