IRS2110STRPBF vs IR2110SPBF 비교

다음의 상세 나란히 비교: IRS2110STRPBF 제조: Infineon 및 IR2110SPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS2110STRPBF IR2110SPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.42 $1.98
Driver Configuration Half-Bridge —
Number of Drivers 2 (High-Side and Low-Side) —
출력 수 2 —
출력 유형 Non-Inverting —
Maximum Offset Voltage 500 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Source/Sink Output Current (typ.) 2.5 A / 2.5 A —
Propagation Delay ton/toff (typ.) 30 ns / 30 ns —
Rise/Fall Time (typ.) 17 ns / 25 ns —
Logic Input Compatibility CMOS/TTL compatible (3.3 V logic compatible) 3.3 V CMOS / LSTTL
Bootstrap Diode Integrated Integrated
Shutdown Input Active-low, forces both outputs low —
Undervoltage Lockout Yes (VCC and VBS) —
동작 온도 -40 C to +150 C —
패키지 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel 16-pin SOIC (SO-16, DW suffix)
실장 유형 Surface Mount Surface Mount
MSL 레벨 3 (168 hours) —
Lead-Free / RoHS Lead-Free, RoHS Compliant Yes / Compliant (Pb-free PBF suffix)
기능 — Half-bridge gate driver
토폴로지 — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
동작 온도 범위 — -40 C to +125 C
Technology — HVIC + latch-immune CMOS

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