IRS2112STRPBF vs IR2109SPBF 对比

详细并排对比 IRS2112STRPBF 出自 Infineon 和 IR2109SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2112STRPBF IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF ✓ 量产中

规格对比

参数 IRS2112STRPBF IR2109SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.88 $1.05
Configuration Half-bridge (high-side + low-side) —
High-side Offset Voltage (max) 600 V —
Output Source Current (typ) 0.29 A —
Output Sink Current (typ) 0.6 A —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Logic Supply Range (VDD) 3.3 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/TTL —
Undervoltage Lockout Both channels (VCC and VBS) Yes (VCC)
Propagation Delay (typ) [DATA_NEEDED: propagation delay] —
dV/dt Immunity Yes (negative transient tolerant) —
Shutdown Input Yes (active-low) —
封装 16-pin SOIC wide-body SOIC-8
安装类型 Surface Mount Surface Mount
工作温度范围 -40 C to +125 C —
MSL 等级 2 (1 year floor life) —
RoHS 状态 Compliant (Pb-free PBF suffix) Compliant
Driver Configuration — Half-Bridge
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
上升时间 — 200 ns
下降时间 — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Bootstrap Diode — Integrated
工作结温 — -40 C to +150 C

数据手册与资源

浏览全部产品 创建 BOM 获取报价