IS43TR16256AL-125KBLI-TR vs H5TC4G63CFR-H9J 对比

详细并排对比 IS43TR16256AL-125KBLI-TR 出自 ISSI, Integrated Silicon Solution Inc 和 H5TC4G63CFR-H9J 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ 量产中
SK hynix
H5TC4G63CFR-H9J H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J ✓ 量产中

规格对比

参数 IS43TR16256AL-125KBLI-TR H5TC4G63CFR-H9J
品牌 ISSI, Integrated Silicon Solution Inc SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.25 $6.00
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 4Gbit (256M x 16) —
数据总线宽度 16 bit —
Clock Frequency 800 MHz —
数据速率 1600 Mbps —
CAS 延迟 11 —
Supply Voltage (VDD/VDDQ) 1.35V ± 0.1V, -0.067V 1.35V +0.100/-0.067V
Backward Compatible Voltage 1.5V —
Row Cycle Time (tRC) 20 ns —
Row Active Time (tRAS) 20 ns —
工作温度范围 -40°C to +95°C (TC) —
封装 96-TWBGA (9x13 mm) 96-ball TFBGA
安装类型 Surface Mount —
Burst Length 8 —
On-Die Termination (ODT) Yes —
Refresh Modes Auto-refresh, Self-refresh —
RoHS 状态 Compliant —
Density — 4Gb
存储组织 — 256M x 16
Speed Grade — -H9 (1866 Mbps / PC3-14900)
Number of Terminals — 96
Temperature Grade — Industrial
Lead-Free — Yes
无卤 — Yes
RoHS Compliant — Yes
Clock Input — Fully differential (CK, CK)
Data Strobe — Differential (DQS, DQS)
On-Chip DLL — Yes
Data Mask (DM) — Yes

数据手册与资源

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