ISC008N06LM6ATMA1 vs ISC151N08NM6ATMA1 对比

详细并排对比 ISC008N06LM6ATMA1 出自 Infineon 和 ISC151N08NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC008N06LM6ATMA1 ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon

ISC008N06LM6ATMA1 - 60V OptiMOS 6 N-Channel MOSFET | Infineon

ISC008N06LM6ATMA1 ✓ 量产中
Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ 量产中

规格对比

参数 ISC008N06LM6ATMA1 ISC151N08NM6ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.78
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID) at Ta 44 A —
Pulsed Drain Current (ID, pulse) at Tc 378 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 221 W —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
Gate Threshold Voltage (VGS(th)) Logic Level (1.0 V to 2.4 V typical) —
工作温度范围 -55 C to +175 C (Tj) —
Package Type PG-TDSON-8 (Surface Mount) —
安装方式 Surface Mount, Tape & Reel —
MSL 等级 1 (per JEDEC J-STD-020) —
RoHS / Lead-Free Status RoHS Compliant, Lead-Free —
无卤 Yes —
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (TA=25°C) — 9.2 A
连续漏极电流(TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
封装 — PG-TDSON-8 FL
安装类型 — Surface Mount
引脚数 — 8
Channel Mode — Enhancement
工作温度 — -55 °C to +175 °C
RoHS 状态 — Compliant

数据手册与资源

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