ISC0805NLSATMA1 vs ISC0802NLSATMA1 对比
详细并排对比 ISC0805NLSATMA1 出自 Infineon 和 ISC0802NLSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC0805NLSATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| 封装 | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C | -55 C to +175 C |
| RoHS 状态 | Compliant | Compliant |
| Series | — | OptiMOS 5 |
| Part Number | — | ISC0802NLSATMA1 |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (Power MOSFET) |
| Continuous Drain Current (ID) at Tc | — | 150 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| RDS(on) max at VGS=10V | — | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | — | 2.5 W |
| Power Dissipation (Pd) at Tc | — | 125 W |