ISC110N12NM6ATMA1 vs ISC0805NLSATMA1 对比
详细并排对比 ISC110N12NM6ATMA1 出自 Infineon 和 ISC0805NLSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC110N12NM6ATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.51 | $0.82 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Ta | 11 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | — |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | SuperSO8 (TDSON-8) | PG-TDSON-8-46 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 13 A |
| Continuous Drain Current (ID) at TC=25°C | — | 71 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 74 W |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | — | 16 nC |
| Input Capacitance Ciss | — | 2.2 nF |
| Reverse Transfer Capacitance Crss | — | 23 pF |
| Output Capacitance Coss | — | 360 pF |
| 工作温度范围 | — | -55 °C to +150 °C |