ISC110N12NM6ATMA1 vs ISC0805NLSATMA1 Comparison

Detailed side-by-side comparison of ISC110N12NM6ATMA1 by Infineon and ISC0805NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC110N12NM6ATMA1 ISC110N12NM6ATMA1 - 120V 9.8mΞ© OptiMOS 6 N-MOSFET | Infineon

ISC110N12NM6ATMA1 - 120V 9.8mΞ© OptiMOS 6 N-MOSFET | Infineon

ISC110N12NM6ATMA1 βœ“ Active
Infineon
ISC0805NLSATMA1 ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 βœ“ Active

Specification Comparison

Parameter ISC110N12NM6ATMA1 ISC0805NLSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $0.82
Polarity N-Channel β€”
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Ta 11 A β€”
Continuous Drain Current (ID) at Tc 62 A β€”
On-Resistance RDS(on) max at VGS=10V 9.8 mΞ© 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V]
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) typ 3.1 V β€”
Total Gate Charge (Qg) 15.4 nC β€”
Input Capacitance (Ciss) 1.1 nF β€”
Output Capacitance (Coss) 330 pF β€”
Reverse Transfer Capacitance (Crss) 10 pF β€”
Power Dissipation (Pd) at Tc 94 W β€”
Power Dissipation (Pd) at Ta 3 W β€”
Avalanche Energy (EAS) 185 mJ β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package SuperSO8 (TDSON-8) PG-TDSON-8-46 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOSβ„’ 5
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at TA=25Β°C β€” 13 A
Continuous Drain Current (ID) at TC=25Β°C β€” 71 A
Power Dissipation (PD) at TA β€” 2.5 W
Power Dissipation (PD) at TC β€” 74 W
On-Resistance RDS(on) max at VGS=4.5V β€” 10.7 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 2.3 V
Gate Charge Qg typ at VGS=4.5V β€” 16 nC
Input Capacitance Ciss β€” 2.2 nF
Reverse Transfer Capacitance Crss β€” 23 pF
Output Capacitance Coss β€” 360 pF
Operating Temperature Range β€” -55 Β°C to +150 Β°C

Datasheets & Resources

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