ISZ056N03LF2SATMA1 vs ISC800P06LMATMA1 对比
详细并排对比 ISZ056N03LF2SATMA1 出自 Infineon 和 ISC800P06LMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISZ056N03LF2SATMA1 | ISC800P06LMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.61 |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET 2 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | -60 V |
| Continuous Drain Current (ID) at Ta | 16 A | — |
| Continuous Drain Current (ID) at Tc | 72 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| 工作温度范围 | -55 C to +175 C | -55 C to +175 C (junction) |
| 封装 | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TDSON-8 (TDSON EP, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TC | — | 19.6 A |
| Power Dissipation (PD) at TC | — | 83 W |
| Technology | — | OptiMOS trench MOSFET |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| 引脚数量 | — | 8 |
| Lead-Free | — | Yes (per Infineon product page) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (per Infineon datasheet) |