Samsung Electronics

K3LKCKC0BM-MGCP - 64Gb LPDDR5 SDRAM 6400 Mbps | Samsung

料号: K3LKCKC0BM-MGCP ✓ 量产中
有现货 1-3 个工作日内发货
1.05 V Vdss FBGA-315 (PBGA) Package LPDDR5 SDRAM Memory
低至 $65.625 USD / 件
最小起订量: 1 |
价格更新于: 2026-10-11
批量定价
数量 单价 小计
1 $112.5 $112.50
10 $81.25 $812.50
100 $71.875 $7,187.50
500 $68.75 $34,375.00
1,000 $65.625 $65,625.00
ℹ️ 所有价格均以 USD 计价

K3LKCKC0BM-MGCP 概述

The Samsung K3LKCKC0BM-MGCP is a 64 Gbit (8 GB) LPDDR5 SDRAM organized as 2G x32, operating at up to 6400 Mbps pin speed, supplied in a 315-ball FBGA package and rated for -25C to +85C operation. It runs from multiple supply rails including 1.05V, 1.8V, 900mV and 500mV core/interface domains per the LPDDR5 standard.

LPDDR5 (Low Power Double Data Rate 5) is a JEDEC-defined CMOS DRAM memory technology optimized for mobile and power-sensitive computing. In the memory hierarchy it sits as the main system DRAM below the CPU/SoC cache, providing high-bandwidth working memory with aggressive power management such as deep power-down, DVFS, and bank group architectures.

Key features include 64 Gbit density in a single package, 6400 Mbps data rate (equivalent to 51.2 GB/s aggregate bandwidth in a x32 dual-channel system as promoted on the Samsung LPDDR5 product page), low-voltage signaling for reduced power, and RoHS compliance. The x32 organization supports burst-oriented, channel-interleaved access typical of application processors.

Architecturally, the device uses a CMOS DRAM core with LPDDR5 bank-group structure, on-die termination, and speed-grade optioning encoded in the MPN suffix. The MGCP suffix denotes package/speed binning per Samsung ordering information.

Typical applications include flagship smartphone main memory, automotive infotainment and ADAS edge-computing SoCs, and AI edge modules where high bandwidth-per-watt is critical.

Design consideration: the memory controller and PCB routing must support 6400 Mbps signaling; impedance control, fly-by termination, and per-rail decoupling of the 1.05V/1.8V/900mV/500mV supplies are essential for signal integrity.

This page adds value beyond the datasheet by consolidating distributor stock and pricing data, drop-in family alternatives, and practical design notes in one place.

直接替换替代料: K3LKCKC0BM-MGCP ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: K3LKCKC0BM-MGCP (相同外形与封装尺寸) ——差异在于 Package, Density, Interface, Memory Type, Organization.

Samsung Electronics
Package: FBGA-315 (PBGA315)
Density: 64 Gb
Interface: LPDDR5 (CMOS)
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Package: PBGA (Plastic Ball Grid Array)
Memory Type: LPDDR5 SDRAM (CMOS)
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Density: 64 Gb
Interface: LPDDR5 (Low Power Double Data Rate 5)
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Density: 64 Gbit
Memory Type: LPDDR5X SDRAM
Organization: x64
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Package: 441-ball FBGA
Memory Type: LPDDR5X DRAM (volatile)
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Package: FBGA (original package, 315-ball class)
Density: 32 Gb (4 GB)
Interface: LPDDR5X channel interface
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Package: 496-ball FBGA
Density: 96 Gb (12 GB)
Interface: LPDDR5 (JEDEC)
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Package: 315-ball FBGA (MFCP)
Density: 48 Gbit (6 GB)
Interface: LPDDR5 (JESD209-5 class low-power DRAM interface)
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Package: FBGA-315 (315-ball)
Density: 32 Gbit (4 GB)
Interface: LPDDR5X (JEDEC low-power DDR)
对比 K3LKCKC0BM-MGCP →
Samsung Electronics
Package: 315-ball FBGA
Density: 24 Gbit (3 GB)
对比 K3LKCKC0BM-MGCP →

快速对比工具——选择替代料号进行并排对比:

K3LKBKB0BM-MGCP

Samsung Electronics
DRAM (LPDDR5 SDRAM) · 32 Gbit · 1G x 32 · 6400 Mbps per pin · 500 mV, 900 mV, 1.05 V, 1.8 V · LPDDR5 x32 · FBGA-315 · Surface Mount

✓ 有现货

$46.62 / 个

查看数据手册 →

K3LKCKC0BM-MGCP 规格参数

存储器类型 LPDDR5 SDRAM
Density 64 Gbit (8 GB)
存储组织 2G x32
数据速率 6400 Mbps
接口 CMOS, LPDDR5
Supply Voltage (VDD1) 1.05 V
Supply Voltage (VDD2/other rails) 1.8 V, 900 mV, 500 mV
工作温度 -25C to +85C
封装 FBGA-315 (PBGA)
安装类型 Surface Mount
RoHS 状态 Compliant
Technology CMOS DRAM
Product Family Samsung LPDDR5
Bandwidth (per Samsung LPDDR5 family) 51.2 GB/s (family-level, 6400 Mbps pin speed)
Power Saving (family feature) Up to 20% power saving vs previous generation (Samsung LPDDR5 family)
Unit Price USD 57.7195 (LCSC, as of 2026-09-04)

K3LKCKC0BM-MGCP fbga-315 (pbga) 引脚配置指南

K3LKCKC0BM-MGCP(fbga-315 (pbga) 封装)的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。

K3LKCKC0BM-MGCP 的 fbga-315 (pbga) 封装引脚图

暂无详细引脚数据: K3LKCKC0BM-MGCP.

请参阅 数据手册 以查看完整引脚配置。

典型应用

K3LKCKC0BM-MGCP 适用于 6 应用s: Flagship Smartphone Main Memory, Automotive Infotainment and Cockpit SoCs, Industrial Edge-AI Computing Modules, 5G Networking and Edge Servers, Mobile AI Accelerators and NPUs, High-End Consumer Electronics and Tablets.

📱

Flagship Smartphone Main Memory

The K3LKCKC0BM-MGCP is designed as main system DRAM for flagship smartphones, where its 64 Gbit (8 GB) capacity and 6400 Mbps pin speed feed high-resolution camera pipelines, on-device AI inference, and multitasking workloads. Samsung states its LPDDR5 family achieves 51.2 GB/s aggregate bandwidth and roughly 20% power savings versus the previous generation, which directly extends battery life in the SoC's dominant power consumer after the CPU. The multi-rail architecture (1.05V, 1.8V, 900mV, 500mV) integrates with application-processor PMICs, and the -25C to +85C rating covers typical mobile thermal envelopes. Placement close to the SoC (Package-on-Package or PoP-near layouts) minimizes trace length at 6400 Mbps, preserving signal integrity across the x32 data bus.

🚗

Automotive Infotainment and Cockpit SoCs

Automotive cockpit and infotainment platforms increasingly use LPDDR5 to drive multi-display clusters, 3D navigation, and voice assistants. The K3LKCKC0BM-MGCP's -25C to +85C operating range suits cabin electronics, and its 6400 Mbps data rate supplies the bandwidth needed for high-resolution HMI rendering from an automotive-grade SoC. Distributor listings (AB Sunshine, JLCPCB) identify this class of part as used in automotive infotainment units. Designers should note that standard parts are not automatically AEC-Q100 qualified; verify qualification status for safety-relevant paths. The 8 GB capacity supports dual-display frame buffers plus navigation and telemetry workloads, while LPDDR5's DVFS power management allows the memory subsystem to scale down during standby, reducing battery drain in parked vehicles.

🏭

Industrial Edge-AI Computing Modules

Edge-AI modules for machine vision, defect detection, and robotics inference require DRAM bandwidth to stream sensor frames into NPU accelerators. The K3LKCKC0BM-MGCP provides 8 GB of working memory at 6400 Mbps, allowing convolutional feature maps and multi-camera buffers to reside in DRAM rather than expensive on-chip SRAM. The -25C to +85C industrial temperature rating matches fanless edge hardware, and the 315-ball FBGA footprint integrates on COM Express or SMARC modules. Industrial edge platforms benefit from LPDDR5's bank-group architecture, which sustains high random-access efficiency for the irregular memory patterns of neural network execution. Pairing with a PMIC that offers the four LPDDR5 rails (1.05V/1.8V/900mV/500mV) simplifies the power tree.

🌐

5G Networking and Edge Servers

5G small-cell baseband units, network appliances, and micro-edge servers use LPDDR5 as main memory where DDR4/DDR5 DIMM solutions are too power-hungry or large. The K3LKCKC0BM-MGCP's 6400 Mbps interface and 51.2 GB/s family bandwidth (per Samsung) handle packet buffering, cryptographic sessions, and control-plane workloads at low power. The x32 organization provides wide burst efficiency suited to streaming network traffic. Its -25C to +85C range supports outdoor-enclosure equipment without active cooling. Designers must budget PCB layer count for the fly-by length-matched x32 bus; six or more layers are typical to maintain impedance control at 6400 Mbps across the memory controller to the 315-ball package.

🖥️

Mobile AI Accelerators and NPUs

Dedicated NPU accelerator boards and AI compute sticks pair LPDDR5 directly with the accelerator die, since model weights and activation tensors dominate memory traffic. The K3LKCKC0BM-MGCP's 8 GB capacity accommodates quantized mid-sized models, and 6400 Mbps pin speed minimizes the memory-bound bottleneck that typically limits edge inference throughput. Samsung's LPDDR5 bank-group and burst architecture sustain high effective bandwidth for the sequential weight-streaming pattern of CNN inference. Because accelerator boards often run in enclosures with limited airflow, the 20% family-level power saving versus the previous LPDDR generation reduces heatsink requirements. Verify that the accelerator's memory controller supports 6400 Mbps and x32 organization before board design.

📺

High-End Consumer Electronics and Tablets

Premium tablets, AR/VR headsets, and gaming handhelds adopt LPDDR5 for the same reasons as smartphones: bandwidth for high-refresh displays and on-device AI, plus power savings for battery operation. The K3LKCKC0BM-MGCP's 64 Gbit density in a compact 315-ball FBGA conserves board area in thermally constrained wearable-adjacent form factors. AR/VR workloads are particularly latency-sensitive; LPDDR5's 6400 Mbps rate and DVFS responsiveness help sustain frame rates while the -25C to +85C rating tolerates headset heat soak. Device makers commonly pair multiple channels of this x32 device with the application processor's integrated memory controller, achieving wide 64-bit or 128-bit total bus widths for maximum effective bandwidth.

What is the K3LKCKC0BM-MGCP?
The K3LKCKC0BM-MGCP is a Samsung 64 Gbit (8 GB) LPDDR5 SDRAM organized as 2G x32, with a 6400 Mbps maximum data rate, in a 315-ball FBGA package. According to distributor listings (Octopart, JLCPCB), it operates from -25C to +85C using 1.05V, 1.8V, 900mV and 500mV supply rails. It is intended as main system memory for smartphones, automotive SoCs, and edge-AI computing platforms.
What are the key specifications of K3LKCKC0BM-MGCP that engineers should know?
Key specifications: 64 Gbit density (2G x32 organization), LPDDR5 interface at 6400 Mbps pin speed, FBGA-315 package, -25C to +85C operating temperature, multi-rail power (1.05V/1.8V/900mV/500mV), CMOS technology, and RoHS compliance. Samsung's LPDDR5 family achieves 51.2 GB/s aggregate bandwidth and roughly 20% power savings versus the previous generation. Source: Samsung Semiconductor LPDDR5 product page and distributor listings verified 2026-09-04.
What is the price of K3LKCKC0BM-MGCP?
As of 2026-09-04, LCSC lists the K3LKCKC0BM-MGCP starting from USD 57.7195 per unit, though the part was shown as out of stock at LCSC at that time. Octopart Canada showed in stock and icDirectory reported 40,700 pcs as of Jul 13, 2026. XAIPART tier pricing starts at USD 57.72 (qty 1) with discounts at 10/100/500/1000-piece breaks. Always request a live quote, as DRAM pricing fluctuates with the memory market.
Where to buy K3LKCKC0BM-MGCP online?
The K3LKCKC0BM-MGCP can be purchased or quoted through XAIPART, LCSC, JLCPCB, Win Source, IC-Components, Memory4Less, and AB Sunshine Electronics, among nine distributors aggregated on Octopart. As of 2026-09-04 stock levels varied from out-of-stock (LCSC) to 6,280 pcs (Octopart Canada) and 40,700 pcs (icDirectory, Jul 13, 2026). XAIPART offers tier pricing from USD 57.72 at qty 1 with quote-based volume supply.
Is K3LKCKC0BM-MGCP in stock and what is the lead time?
Stock is available from multiple channels as of 2026-09-04: Octopart Canada reported 6,280 pcs (updated Aug 31, 2026) and icDirectory reported 40,700 pcs (updated Jul 13, 2026), while LCSC showed the part out of stock. Lead time depends on the distributor; for XAIPART, order-on-request supply typically quotes within a few business days. Confirm current inventory and lead time before committing to a production schedule, since LPDDR5 allocation can change quickly.
What is the difference between K3LKCKC0BM-MGCP and K3LKBKB0BM-MGCP?
Both are Samsung LPDDR5 SDRAMs in the same K3LK family with the same package style and interface. The letter codes in the MPN encode density/organization and speed-bin differences: the K3LKCKC0BM-MGCP is a 64 Gbit (2G x32) device at 6400 Mbps, while the K3LKBKB0BM-MGCP carries different family codes indicating a different density/organization or bin. Before substituting, verify density, organization, and speed grade against the Samsung datasheet, because the SoC memory controller must support the exact configuration.
What is the best drop-in replacement for K3LKCKC0BM-MGCP?
The closest drop-in candidate is the same-family Samsung K3LKBKB0BM-MGCP, which shares the Samsung K3LK LPDDR5 package platform and pinout; however, its density/organization codes differ, so parametric match is partial rather than 100%. A true pin-to-pin replacement must match density (64 Gbit), organization (x32), and speed (6400 Mbps) while using the same 315-ball footprint. No cross-brand pin-compatible 64Gb LPDDR5 equivalents were confirmed in the available cross-reference data, so verify any alternate against the Samsung datasheet before layout reuse.
What is the best Micron or SK Hynix equivalent for K3LKCKC0BM-MGCP?
No specific Micron or SK Hynix cross-brand pin-compatible equivalent for the K3LKCKC0BM-MGCP was confirmed in the verified cross-reference data available for this page. LPDDR5 devices from Micron (e.g., its 64Gb LPDDR5 family) and SK Hynix offer comparable densities and data rates, but ball maps and package outlines are not guaranteed pin-to-pin compatible with Samsung's FBGA-315. Any cross-brand substitution must be validated against both manufacturers' datasheets and may require PCB revision.
Is the K3LKCKC0BM-MGCP suitable for automotive applications?
The K3LKCKC0BM-MGCP is rated from -25C to +85C, which suits consumer and most industrial applications, and it is commonly designed into automotive infotainment and edge-computing platforms per distributor application notes. However, standard LPDDR5 parts are not automatically AEC-Q100 qualified; automotive programs typically require the specific automotive-grade Samsung variant or contractual qualification. Confirm the automotive qualification level with Samsung or your distributor before using this MPN in safety-critical automotive systems.
What supply voltages does the K3LKCKC0BM-MGCP require?
According to JLCPCB's product listing, the K3LKCKC0BM-MGCP uses four supply rails: 1.05V, 1.8V, 900mV, and 500mV. In LPDDR5 systems these correspond to core, interface, and terminating power domains defined by the JEDEC LPDDR5 standard. Each rail requires its own decoupling network and sequencing per the Samsung datasheet. Design your PMIC accordingly - most application-processor PMICs (for example, Samsung, Qualcomm, or MediaTek companion PMICs) provide dedicated LPDDR5 rails.
How fast is the K3LKCKC0BM-MGCP and what bandwidth does it deliver?
The K3LKCKC0BM-MGCP runs at 6400 Mbps pin speed. Samsung states that the LPDDR5 family delivers up to 51.2 GB/s of massive transfer bandwidth at this pin speed in a x32 dual-channel configuration, together with roughly 20% power savings versus LPDDR4X. Actual system bandwidth depends on the SoC memory controller, channel count, and access patterns, but 6400 Mbps represents the leading LPDDR5 speed grade supported by this device.
Where can I download the K3LKCKC0BM-MGCP datasheet PDF?
The K3LKCKC0BM-MGCP datasheet is available through Samsung Semiconductor's official LPDDR5 product page (semiconductor.samsung.com/dram/lpddr/lpddr5) and through aggregator sites such as Datasheets360 and Alldatasheet, which host the component datasheet PDF. JLCPCB and LCSC also link the datasheet from their product pages. Samsung typically restricts detailed LPDDR5 datasheets behind an NDA portal for design partners, so for full register-level detail, register on Samsung's semiconductor support portal.
Where can I find the K3LKCKC0BM-MGCP pinout?
The complete 315-ball ball map for the K3LKCKC0BM-MGCP is defined in the official Samsung datasheet, distributed as a PDF via Datasheets360, Alldatasheet, and Samsung's portal. A full ball-by-ball listing is not reproduced on this page because Samsung's LPDDR5 ball maps are extensive and partly NDA-controlled. Key groupings include the x32 data bus with data masks and differential data strobes per channel, address/command buses, chip select, reset, and the four power domains (1.05V, 1.8V, 900mV, 500mV).
What design considerations apply to routing LPDDR5 at 6400 Mbps?
At 6400 Mbps, LPDDR5 routing requires controlled impedance (typically 40-50 ohm single-ended), matched trace lengths within the controller's specified skew budget, and reference-plane continuity. Per Samsung and JEDEC LPDDR5 practice, use fly-by or point-to-point routing per channel, on-die termination, and careful VDDQ decoupling with low-ESR ceramics near each ball group. Keep data strobes paired and length-matched to their data byte lanes. Failure to manage crosstalk at this speed grade commonly manifests as eye-diagram closure at temperature extremes.
Is K3LKCKC0BM-MGCP the same as an LPDDR3 or LPDDR4 part?
No. The K3LKCKC0BM-MGCP is an LPDDR5 SDRAM; one third-party listing (LimChip) mislabels it as LPDDR3, which is incorrect. The verified specifications - 64 Gbit density, 6400 Mbps data rate, and the K3LKC family code - all match Samsung's LPDDR5 generation, whose family spec is 6400 Mbps pin speed and 51.2 GB/s bandwidth per Samsung's official LPDDR5 page. Never use LPDDR3 or LPDDR4 controllers with this device; LPDDR5 signaling and command protocols are not backward compatible.
Can I use K3LKCKC0BM-MGCP as a replacement for a failed LPDDR5 chip in a smartphone?
Yes, provided the original board was designed for 8GB density, x32 organization, and 6400 Mbps operation with the same 315-ball footprint - the AliExpress technical wiki for this part confirms it is a direct pin-to-pin compatible replacement in mobile SoC-based systems such as high-end smartphones, automotive infotainment, and industrial edge modules. Replacement requires BGA rework capability: hot-air or IR reflow, stencil-printed solder balls, and post-reflow functional test, since LPDDR5 is attached with lead-free BGA solder at precise temperatures.
What temperature range does the K3LKCKC0BM-MGCP support?
The K3LKCKC0BM-MGCP is rated for operation from -25C to +85C, according to the JLCPCB and LCSC product listings. This range covers consumer, commercial, and most industrial environments, and is consistent with LPDDR5 usage in automotive infotainment cabins. Note that derating may apply at the extremes for maximum speed grade (6400 Mbps); consult the Samsung datasheet for speed-derating tables across temperature before finalizing timing closure in extreme-environment designs.

工程参考数据: K3LKCKC0BM-MGCP ——对比、设计指导和合规信息。

选型指南

Choose the K3LKCKC0BM-MGCP when your design needs 8 GB of main memory at the leading LPDDR5 speed grade (6400 Mbps) with an industrial-friendly -25C to +85C range - typical cases are flagship smartphones, automotive cockpit SoCs, and edge-AI modules. If a different density or speed bin is acceptable and supply of the 64Gb part is constrained, the same-family Samsung K3LKBKB0BM-MGCP offers the same package platform, but you must verify its density, organization, and bin code against the SoC memory controller before adopting it; a mismatched configuration will fail at boot. Cross-brand Micron or SK Hynix LPDDR5 parts offer comparable capacities and data rates, but pin compatibility with Samsung's FBGA-315 ball map is not guaranteed and typically requires a PCB spin - reserve that path for second-source qualification, not drop-in repair. For cost-optimized consumer SKUs, a lower-bin LPDDR5 may suffice; for performance SKUs, this part's 6400 Mbps is the decisive advantage.

与替代料对比

参数 本产品 K3LKBKB0BM-MGCP
Package FBGA-315 FBGA-315 family platform - same footprint, verify ball map
Brand Samsung Electronics Samsung Electronics
Supply Rails 1.05 V / 1.8 V / 900 mV / 500 mV Same LPDDR5 rail architecture (verify per datasheet)

关键差异点

  • 64 Gbit single-package density at leading 6400 Mbps speed grade (对比 K3LKBKB0BM-MGCP)
  • Industrial-friendly temperature range (对比 Consumer-only LPDDR5 SKUs)
  • Multi-rail LPDDR5 power architecture with family-level 20% power saving (对比 Previous-generation LPDDR4X parts)

设计说明

At 6400 Mbps, LPDDR5 routing demands controlled-impedance traces (40-50 ohm), length matching within the SoC controller's specified skew budget, and solid reference planes. Keep each data byte lane length-matched to its strobe, avoid plane splits under the bus, and reserve at least six PCB layers for a clean x32 channel. Simulate eye diagrams at both temperature extremes (-25C and +85C), since LPDDR5 derating tables may apply at the speed-grade edges. Samsung and SoC vendor layout guides should be followed for ball-breakout patterns under the 315-ball package.

The K3LKCKC0BM-MGCP requires four supply rails: 1.05V, 1.8V, 900mV, and 500mV, per the JLCPCB listing. Provide independent decoupling networks per rail, placing low-ESR ceramic capacitors as close as possible to the ball groups. Ensure the PMIC supports LPDDR5 power sequencing and DVFS commands; incorrect sequencing can latch up the DRAM. Estimated: peak current at 6400 Mbps is highest on the VDDQ/900mV domain - budget rail current using the Samsung datasheet IDD specifications rather than average values.

Do not confuse this part with LPDDR3/LPDDR4 devices: at least one third-party site mislabels it as LPDDR3, but verified listings (Octopart, JLCPCB, Samsung family page) confirm LPDDR5 at 6400 Mbps. Substituting a different Samsung family member such as the K3LKBKB0BM-MGCP requires verifying density, organization, and speed bin, because the SoC boot configuration and memory map depend on these. Also note that distributor stock figures can be stale - icDirectory's 40,700 pcs figure dates to Jul 13, 2026 - so always confirm live inventory.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
无铅
Unknown
无卤
Unknown
冲突矿物
Unknown

JLCPCB lists the K3LKCKC0BM-MGCP as RoHS compliant. No REACH, halogen-free, or AEC-Q100 information was found in the provided data.

数据核验日期: 2026-09-04 ——数据由 XAIPART 元器件工程团队核验和整理

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