K4A4G085WE-BCRC vs MT40A512M8SA-062E 对比
详细并排对比 K4A4G085WE-BCRC 出自 Samsung Electronics 和 MT40A512M8SA-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WE-BCRC | MT40A512M8SA-062E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.36 | $5.35 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2400 Mbps | 3200 MT/s (DDR4-3200 class) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| 封装 | FBGA-78 | 78-FBGA (7.5 x 11 mm), Z10B |
| 安装类型 | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| 接口 | Parallel | Parallel, 1.2 V pseudo open-drain I/O |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | — |
| MSL 等级 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS 状态 | Compliant (per LCSC listing) | — |
| 存储容量 | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 13.75 ns |
| Write Cycle Time | — | 15 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP Supply | — | 2.5 V (-125 mV / +250 mV) |
| VREFDQ | — | On-die internal adjustable generation |
| Operating Temperature (TC max) | — | up to 95 degrees C |
| Package Flow | — | :F (lead-free / RoHS) |
| 安装方式 | — | SMD/SMT |