K4A4G085WE-BCRC vs MT40A512M8SA-062E Comparison
Detailed side-by-side comparison of K4A4G085WE-BCRC by Samsung Electronics and MT40A512M8SA-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WE-BCRC | MT40A512M8SA-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.36 | $5.35 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organization | 512M x 8 | 512M x 8 |
| Data Rate | 2400 Mbps | 3200 MT/s (DDR4-3200 class) |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| Package | FBGA-78 | 78-FBGA (7.5 x 11 mm), Z10B |
| Mounting Type | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| Interface | Parallel | Parallel, 1.2 V pseudo open-drain I/O |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| Operating Temperature | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | — |
| MSL Level | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS Status | Compliant (per LCSC listing) | — |
| Memory Size | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 13.75 ns |
| Write Cycle Time | — | 15 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP Supply | — | 2.5 V (-125 mV / +250 mV) |
| VREFDQ | — | On-die internal adjustable generation |
| Operating Temperature (TC max) | — | up to 95 degrees C |
| Package Flow | — | :F (lead-free / RoHS) |
| Mounting Style | — | SMD/SMT |