K4A4G165WE-BCTD vs MT40A256M16GE-075E:B 对比
详细并排对比 K4A4G165WE-BCTD 出自 Samsung Electronics 和 MT40A256M16GE-075E:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 量产中规格对比
| 参数 | K4A4G165WE-BCTD | MT40A256M16GE-075E:B |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $11.38 | $3.95 |
| 存储器类型 | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| 存储容量 | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | — |
| 接口 | Parallel, x16 | — |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) | — |
| Die Generation | E-die | — |
| 封装 | FBGA-96 (TFBGA) | 96-FBGA (9 x 14 mm) |
| Terminal Count | 96 | — |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range for standard grade] |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | — |
| Product Status | Active | — |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 | — |
| Burst Length | BL8 (JEDEC DDR4) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| 存储组织 | — | 256M x 16 |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| 数据速率 | — | 2666 MT/s (DDR4-2666) |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| Refresh | — | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |