K4A8G045WB-BCPB vs K4A8G045WB-BCRC 对比
详细并排对比 K4A8G045WB-BCPB 出自 Samsung Electronics 和 K4A8G045WB-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G045WB-BCPB | K4A8G045WB-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.02 | $2.95 |
| 存储器类型 | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 2G x 4 | 2G x 4 |
| 数据速率 | 2133 Mbps/pin (PC4-2133) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封装 | 78-ball FBGA | 78-ball FBGA (PBGA78) |
| 安装类型 | Surface Mount | Surface Mount |
| Prefetch Architecture | 8n | — |
| Burst Length | BL8, BC4 (burst chop) | — |
| Refresh Cycles | 8192 | 8192 |
| Refresh Modes | Auto-refresh, Self-refresh | — |
| Termination | On-Die Termination (ODT) | — |
| Reset | Asynchronous Reset | — |
| Clocking | Differential clocks (CK/CK#) | — |
| 工作温度 | 0C to +85C | 0 C to 85 C |
| Max Supply Current | 211.7 mA | — |
| 特性 | Posted CAS, Programmable CWL, Internal (Self) Calibration | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| 接口 | — | CMOS, differential clock (CK/CK#) |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |