K4A8G045WB-BCPB vs K4A8G045WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G045WB-BCPB by Samsung Electronics and K4A8G045WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB-BCPB

K4A8G045WB-BCPB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps | Samsung

K4A8G045WB-BCPB βœ“ Active
Samsung Electronics
K4A8G045WB-BCRC

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC βœ“ Active

Specification Comparison

Parameter K4A8G045WB-BCPB K4A8G045WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.10 $2.95
Memory Type DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 2G x 4 2G x 4
Data Rate 2133 Mbps/pin (PC4-2133) β€”
Supply Voltage (VDD) 1.2 V β€”
Package 78-ball FBGA 78-ball FBGA (PBGA78)
Mounting Type Surface Mount Surface Mount
Prefetch Architecture 8n β€”
Burst Length BL8, BC4 (burst chop) β€”
Refresh Cycles 8192 8192
Refresh Modes Auto-refresh, Self-refresh β€”
Termination On-Die Termination (ODT) β€”
Reset Asynchronous Reset β€”
Clocking Differential clocks (CK/CK#) β€”
Operating Temperature 0C to +85C 0 C to 85 C
Max Supply Current 211.7 mA β€”
Features Posted CAS, Programmable CWL, Internal (Self) Calibration β€”
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Speed β€” 2400 Mbps
Supply Voltage (VDD/VDDQ) β€” 1.2 V
Process Technology β€” Samsung B-die
Interface β€” CMOS, differential clock (CK/CK#)
Maximum Supply Current β€” 211.7 mA
Terminals β€” 78
Key DDR4 Features β€” Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode β€” Timing specified for DLL-enabled operation

Datasheets & Resources

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