K4A8G085WB-BCPB vs H5ANAG8NBJR-PBC 对比
详细并排对比 K4A8G085WB-BCPB 出自 Samsung Electronics 和 H5ANAG8NBJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WB-BCPB | H5ANAG8NBJR-PBC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.78 | $31.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 16 Gbit (2 GB) |
| 存储组织 | 1G x 8 | x8 |
| 电源电压 | 1.2 V (nominal) | — |
| 数据速率 | 3200 Mbps (PC4-25600) | — |
| Speed Grade | BC | — |
| CAS Latency (CL) | 22 | — |
| Burst Length | 8 | — |
| Bank Architecture | 16 banks (4 bank groups) | 16 banks in 4 bank groups (DDR4 standard) |
| Refresh Interval | 7.8 us (up to 85C) | — |
| 接口类型 | SSTL-12 | Parallel, SSTL12 |
| Termination | ODT / dynamic ODT | — |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) | — |
| 封装 | 78-ball FBGA | FBGA-78 (7.5 mm x 11 mm) |
| Package Dimensions | 11 mm x 11 mm | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| Operating Mode | DLL enabled | — |
| RoHS 状态 | Compliant | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Prefetch | — | 8n |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | — | BJR |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |