K4A8G085WB-BCPB vs H5ANAG8NBJR-PBC Vergleich
Detaillierter Direktvergleich von K4A8G085WB-BCPB von Samsung Electronics und H5ANAG8NBJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WB-BCPB | H5ANAG8NBJR-PBC |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $13,78 | $31,50 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 16 Gbit (2 GB) |
| Speicherorganisation | 1G x 8 | x8 |
| Versorgungsspannung | 1.2 V (nominal) | — |
| Datenrate | 3200 Mbps (PC4-25600) | — |
| Speed Grade | BC | — |
| CAS Latency (CL) | 22 | — |
| Burst Length | 8 | — |
| Bank Architecture | 16 banks (4 bank groups) | 16 banks in 4 bank groups (DDR4 standard) |
| Refresh Interval | 7.8 us (up to 85C) | — |
| Schnittstellentyp | SSTL-12 | Parallel, SSTL12 |
| Termination | ODT / dynamic ODT | — |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) | — |
| Gehäuse | 78-ball FBGA | FBGA-78 (7.5 mm x 11 mm) |
| Package Dimensions | 11 mm x 11 mm | — |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Operating Mode | DLL enabled | — |
| RoHS-Status | Compliant | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Prefetch | — | 8n |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | — | BJR |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |