K4A8G085WB-BCPB vs K4A8G085WC-BCPB 对比

详细并排对比 K4A8G085WB-BCPB 出自 Samsung Electronics 和 K4A8G085WC-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB ✓ 量产中
Samsung Electronics
K4A8G085WC-BCPB K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB ✗ 停产

规格对比

参数 K4A8G085WB-BCPB K4A8G085WC-BCPB
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs DRAM
生命周期状态 有效 停产
库存状态 有库存 有库存
单价(USD) $13.78 $2.95
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 1G x 8 1G x 8
电源电压 1.2 V (nominal) 1.2 V
数据速率 3200 Mbps (PC4-25600) 2133 Mbps
Speed Grade BC DDR4-2133
CAS Latency (CL) 22 —
Burst Length 8 —
Bank Architecture 16 banks (4 bank groups) —
Refresh Interval 7.8 us (up to 85C) —
接口类型 SSTL-12 —
Termination ODT / dynamic ODT —
Self-Refresh Temperature-Compensated Self-Refresh (TCSR) —
封装 78-ball FBGA 78FBGA
Package Dimensions 11 mm x 11 mm —
安装类型 Surface Mount (BGA) Surface Mount
Operating Mode DLL enabled —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
工作温度 — 0 C to +85 C
Number of Terminals — 78
Maximum Seated Height — 1.2 mm
特性 — Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask
Refresh — [DATA_NEEDED: refresh rate 1x/2x]
CAS 延迟 — [DATA_NEEDED: CAS latency]
Die Revision — [DATA_NEEDED: die revision]
Standard Package Quantity — [DATA_NEEDED: standard package quantity]

数据手册与资源

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