K4A8G085WB-BCTD vs MT40A1G8SA-062E 对比
详细并排对比 K4A8G085WB-BCTD 出自 Samsung Electronics 和 MT40A1G8SA-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WB-BCTD | MT40A1G8SA-062E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $6.05 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb (1G x 8) | — |
| 电源电压 | 1.2 V | — |
| 数据速率 | 3200 Mbps (PC4-25600) | 3200 MT/s (DDR4-3200) |
| Speed Bin | CL22-22-22 | — |
| 封装 | FBGA-78 (TFBGA) | 78-ball FBGA (7.5 x 11 mm) |
| 工作温度 | 0°C to +95°C (TC) | 0C to +95C (CT range; IT: -40C to +95C) |
| Burst Length | 8 (BL8) | BL8, BC4 (burst chop) |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask Function | Yes | — |
| JESD-30 Code | R-PBGA-B78 | — |
| Number of Terminals | 78 | — |
| RoHS 状态 | Compliant | — |
| Density | — | 8 Gbit |
| 存储组织 | — | 1G x 8 |
| Clock Frequency | — | 1.6 GHz |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| I/O Type | — | 1.2 V pseudo open-drain |
| 安装类型 | — | Surface Mount |
| 特性 | — | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |