K4A8G085WB-BCTD vs MT40A1G8SA-062E Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and MT40A1G8SA-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Active
Specification Comparison
| Parameter | K4A8G085WB-BCTD | MT40A1G8SA-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $8.53 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps | 3200 MT/s (DDR4-3200) |
| Supply Voltage | 1.2 V | — |
| Die Revision | B-die | — |
| Package | FBGA-78 (78-ball TFBGA) | 78-ball FBGA (7.5 x 11 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | BL8, BC4 (burst chop) |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Features | ZQ calibration, CRC, CA parity, asynchronous reset | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +95C (CT range; IT: -40C to +95C) |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Clock Frequency | — | 1.6 GHz |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| I/O Type | — | 1.2 V pseudo open-drain |