K4A8G085WB-BCTD vs MT40A1G8SA-062E Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and MT40A1G8SA-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD β ActiveMicron Technology
MT40A1G8SA-062E
MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A1G8SA-062E β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCTD | MT40A1G8SA-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $6.05 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (1G x 8) | β |
| Supply Voltage | 1.2 V | β |
| Data Rate | 3200 Mbps (PC4-25600) | 3200 MT/s (DDR4-3200) |
| Speed Bin | CL22-22-22 | β |
| Package | FBGA-78 (TFBGA) | 78-ball FBGA (7.5 x 11 mm) |
| Operating Temperature | 0Β°C to +95Β°C (TC) | 0C to +95C (CT range; IT: -40C to +95C) |
| Burst Length | 8 (BL8) | BL8, BC4 (burst chop) |
| On-Die Termination | Yes (ODT) | β |
| ZQ Calibration | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| Data Mask Function | Yes | β |
| JESD-30 Code | R-PBGA-B78 | β |
| Number of Terminals | 78 | β |
| RoHS Status | Compliant | β |
| Density | β | 8 Gbit |
| Organization | β | 1G x 8 |
| Clock Frequency | β | 1.6 GHz |
| Access Time (CAS Latency) | β | CL22 at 3200 MT/s |
| Row Access Time | β | 19 ns |
| VDD / VDDQ | β | 1.2 V +/-60 mV |
| VPP | β | 2.5 V, -125 mV, +250 mV |
| Internal Banks | β | 16 banks (4 bank groups x 4 banks) |
| Refresh | β | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| I/O Type | β | 1.2 V pseudo open-drain |
| Mounting Type | β | Surface Mount |
| Features | β | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |