K4A8G085WB-BICR vs K4A8G085WB-BICH 对比
详细并排对比 K4A8G085WB-BICR 出自 Samsung Electronics 和 K4A8G085WB-BICH 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ 量产中规格对比
| 参数 | K4A8G085WB-BICR | K4A8G085WB-BICH |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.25 | $4.96 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| 存储组织 | 1G x 8 | 1G x 8 |
| 数据速率 | 2400 Mbps | 2400 Mbps (DDR4-2400) |
| 电源电压 | 1.2 V (VDD/VDDQ) | 1.2V |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| 封装 | 78-ball FBGA | 78-ball FBGA |
| 引脚数量 | 78 | — |
| 安装类型 | Surface Mount | — |
| Temperature Grade | Industrial (I-grade) | — |
| 工作温度范围 | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | — |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | Yes |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| 工作温度 | — | 0°C to 85°C |
| Max Supply Current | — | 170mA |
| Burst Length | — | BL8, BL16 |
| CAS 延迟 | — | Programmable |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| RoHS | — | Compliant |
| Die Revision | — | B-die |