K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
料号： K4A8G085WB-BICH ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $6.48 | $6.48 |
| 10 | $6.1 | $61.00 |
| 100 | $5.72 | $572.00 |
| 500 | $5.34 | $2,670.00 |
| 1,000 | $4.96 | $4,960.00 |
K4A8G085WB-BICH 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and features higher module densities and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, and embedded systems.
Key features include a 1.2V power supply, 8Gb density, x8 organization, and a 78-ball FBGA package. The device supports various burst lengths (BL8, BL16) and features programmable CAS latency, write latency, and refresh rates. It also includes on-die ECC, error correction coding, and temperature-compensated refresh for enhanced reliability.
Technically, the K4A8G085WB-BICH utilizes Samsung's advanced B-die process technology, offering low power consumption and high-speed operation. It supports a wide operating temperature range of 0°C to 85°C, making it suitable for commercial and industrial environments. The device is RoHS compliant and lead-free.
Typical applications include servers, data centers, networking equipment, and high-end consumer electronics. Its high density and speed make it ideal for memory-intensive tasks such as virtualization, cloud computing, and real-time analytics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and careful attention to timing parameters for reliable operation.
直接替换替代料： K4A8G085WB-BICH ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4A8G085WB-BICH （相同外形与封装尺寸） ——差异在于 Data Rate, Operating Temperature, Burst Length, Package, Supply Voltage.
快速对比工具——选择替代料号进行并排对比：
K4A8G085WB-BCPB
✅ 直接替换✓ 有现货
$13.7813 / 个
查看数据手册 →K4A8G085WB-BCRC
✅ 直接替换✓ 有现货
$6.8 / 个
查看数据手册 →K4A8G085WB-BIRC
✅ 直接替换✓ 有现货
$6.5625 / 个
查看数据手册 →K4A8G085WC-BIWE
✅ 直接替换✓ 有现货
$6.29 / 个
查看数据手册 →K4A8G085WB-BCTD
✅ 直接替换✓ 有现货
$7.5 / 个
查看数据手册 →K4A8G085WB-BITD
✅ 直接替换✓ 有现货
$3.8 / 个
查看数据手册 →K4A8G085WB-BICH 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8Gb |
| 存储组织 | 1G x 8 |
| 电源电压 | 1.2V |
| 数据速率 | 2400 Mbps (DDR4-2400) |
| 封装 | 78-ball FBGA |
| 工作温度 | 0°C to 85°C |
| Max Supply Current | 170mA |
| Burst Length | BL8, BL16 |
| CAS 延迟 | Programmable |
| On-Die ECC | Yes |
| Data Bus Inversion | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
| Die Revision | B-die |
K4A8G085WB-BICH 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 B1 | DQ2 — Data input/output 2 |
| 引脚 B2 | DQ3 — Data input/output 3 |
| 引脚 B3 | VDD — Power supply |
| 引脚 B4 | DQ4 — Data input/output 4 |
| 引脚 C1 | DQ5 — Data input/output 5 |
| 引脚 C2 | VSS — Ground |
| 引脚 C3 | DQ6 — Data input/output 6 |
| 引脚 C4 | DQ7 — Data input/output 7 |
典型应用
K4A8G085WB-BICH 适用于 6 应用s: Server Memory, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center Storage.
Server Memory
The K4A8G085WB-BICH provides high-density, high-speed memory for servers, enabling fast data processing and virtualization. Its 8Gb density and DDR4-2400 speed support demanding workloads, while 1.2V operation reduces power consumption in data centers. The FBGA-78 package allows compact module designs, and on-die ECC enhances reliability for enterprise applications.
推荐
Networking Equipment
In networking equipment such as routers and switches, the K4A8G085WB-BICH offers high bandwidth and low latency for packet processing and routing tables. Its 1.2V operation minimizes heat generation, crucial for dense line cards. The x8 organization simplifies board layout, and the wide temperature range supports outdoor and industrial networking gear.
推荐
Industrial Computing
For industrial PCs and embedded systems, the K4A8G085WB-BICH provides reliable memory operation from 0°C to 85°C. Its high density supports complex control algorithms and data logging. The FBGA package is robust for harsh environments, and the low power consumption is ideal for fanless designs. On-die ECC helps prevent data corruption in critical applications.
推荐
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G085WB-BICH delivers fast memory performance for smooth graphics and multitasking. Its 8Gb density allows for rich multimedia experiences, while 1.2V operation extends battery life in portable devices. The compact FBGA package enables slim product designs.
推荐
Automotive Infotainment
The K4A8G085WB-BICH supports automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its wide temperature range and reliability make it suitable for vehicle environments. The 1.2V operation reduces power draw, and the FBGA package withstands vibration. On-die ECC enhances data integrity for safety-critical functions.
推荐
Data Center Storage
In data center storage systems, the K4A8G085WB-BICH provides high-speed cache memory for SSDs and storage controllers. Its 8Gb density and DDR4-2400 speed accelerate data access, while low power consumption reduces operational costs. The FBGA package is ideal for high-density storage arrays, and on-die ECC ensures data integrity in large-scale deployments.
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推荐产品汇总
工程参考数据： K4A8G085WB-BICH ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4A8G085WB-BCPB | K4A8G085WB-BCRC | K4A8G085WB-BIRC |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
关键差异点
- B-die process technology （对比 K4A8G085WC-BIWE (C-die))
- Wide operating temperature range （对比 K4A8G085WB-BCPB)
- On-die ECC support （对比 K4A8G085WB-BCRC)
设计说明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route DQ signals with matched trace lengths to ensure signal integrity. Follow the layout guidelines in the Samsung datasheet for optimal performance.
The K4A8G085WB-BICH operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The max supply current is 170mA, so power dissipation is moderate, but thermal management is still important for reliability.
Use on-die termination (ODT) settings to match the memory controller's impedance and reduce reflections. Set the appropriate ODT values in the memory controller registers. Also, enable data bus inversion (DBI) to reduce simultaneous switching noise.
合规信息
RoHS compliant per Samsung datasheet. Lead-free. AEC-Q100 not applicable for memory components.
