K4A8G165WB-BCWE vs H5AN8G6NAFR 对比
详细并排对比 K4A8G165WB-BCWE 出自 Samsung Electronics 和 H5AN8G6NAFR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCWE | H5AN8G6NAFR |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.55 | $0.12 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 3200 Mbps | 2400 MT/s |
| 电源电压 | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | — |
| 接口 | Parallel | — |
| 封装 | 96FBGA | 96-ball FBGA |
| 安装类型 | Surface Mount | — |
| 工作温度 | 0C to +85C | 0°C to +85°C |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS 状态 | Compliant | — |
| Lead Free | Yes | — |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |
| Write Leveling | — | Yes |