K4A8G165WB-BCWE vs H5AN8G6NAFR Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and H5AN8G6NAFR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BCWE | H5AN8G6NAFR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 2400 MT/s |
| Supply Voltage | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | — |
| Interface | Parallel | — |
| Package | 96FBGA | 96-ball FBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0C to +85C | 0°C to +85°C |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS Status | Compliant | — |
| Lead Free | Yes | — |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |
| Write Leveling | — | Yes |