K4A8G165WC-BCRC vs H5AN8G6NCJR-PBC 对比
详细并排对比 K4A8G165WC-BCRC 出自 Samsung Electronics 和 H5AN8G6NCJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WC-BCRC | H5AN8G6NCJR-PBC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $23.00 | $3.30 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 2400 Mbps | [DATA_NEEDED: exact speed grade of -PBC suffix] |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V |
| VPP Voltage | 2.5 V | — |
| 工作温度 | 0°C to +95°C (case) | 0C to +95C |
| 封装 | 96-ball FBGA (9mm x 13mm) | FBGA-96 (96-ball fine-pitch BGA) |
| 接口 | 16-bit I/O | Parallel, synchronous to both clock edges |
| Banks | 16 (4 bank groups) | — |
| Burst Length | 8 (BL8) | — |
| CAS 延迟 | Programmable (e.g., 16, 17, 18) | — |
| Refresh | Temperature-compensated self-refresh (TCSR) | — |
| RoHS | Compliant | — |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Organization | — | 8Gb x16 (512M x 16) |
| 存储容量 | — | 8 Gbit |
| Family Data Rate Range | — | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) |
| RoHS 状态 | — | Compliant |