K4A8G165WC-BCRC vs H5AN8G6NCJR-PBC Comparison
Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electronics and H5AN8G6NCJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WC-BCRC | H5AN8G6NCJR-PBC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $23.00 | $3.30 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 2400 Mbps | [DATA_NEEDED: exact speed grade of -PBC suffix] |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V |
| VPP Voltage | 2.5 V | — |
| Operating Temperature | 0°C to +95°C (case) | 0C to +95C |
| Package | 96-ball FBGA (9mm x 13mm) | FBGA-96 (96-ball fine-pitch BGA) |
| Interface | 16-bit I/O | Parallel, synchronous to both clock edges |
| Banks | 16 (4 bank groups) | — |
| Burst Length | 8 (BL8) | — |
| CAS Latency | Programmable (e.g., 16, 17, 18) | — |
| Refresh | Temperature-compensated self-refresh (TCSR) | — |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Organization | — | 8Gb x16 (512M x 16) |
| Memory Size | — | 8 Gbit |
| Family Data Rate Range | — | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) |
| RoHS Status | — | Compliant |