K4A8G165WC-BCWE vs YZ48G16V-F9HPI-M 对比
详细并排对比 K4A8G165WC-BCWE 出自 Samsung Electronics 和 YZ48G16V-F9HPI-M 出自 Loongtion。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WC-BCWE | YZ48G16V-F9HPI-M |
|---|---|---|
| 品牌 | Samsung Electronics | Loongtion |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $38.00 | $8.60 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| 工作温度范围 | 0°C to +95°C | -40°C to +85°C |
| 封装 | 96-FBGA | FBGA96 |
| 安装类型 | Surface Mount | Surface Mount |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8 (BL8) / 4 (BC4) | — |
| Number of Banks | 16 | — |
| Row Address Bits | 16 | — |
| Column Address Bits | 10 | — |
| 接口 | Differential (CK, /CK) | DDR4 |
| RoHS 状态 | Compliant | Compliant |
| JEDEC Standard | JEDEC DDR4 | — |
| 电源电压 | — | 1.2 V |
| 引脚数量 | — | 96 |
| Industrial Grade | — | Yes |
| Compatible with | — | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B |
| 数据总线宽度 | — | 16 bits |
| Refresh | — | Auto-refresh |