K4A8G165WC-BCWE vs YZ48G16V-F9HPI-M Comparison
Detailed side-by-side comparison of K4A8G165WC-BCWE by Samsung Electronics and YZ48G16V-F9HPI-M by Loongtion. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveLoongtion
YZ48G16V-F9HPI-M
YZ48G16V-F9HPI-M - 8Gb DDR4 SDRAM x16 FBGA96 | Loongtion
YZ48G16V-F9HPI-M β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCWE | YZ48G16V-F9HPI-M |
|---|---|---|
| Brand | Samsung Electronics | Loongtion |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $38.00 | $8.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | β |
| VPP Voltage | 2.5 V | β |
| Operating Temperature Range | 0Β°C to +95Β°C | -40Β°C to +85Β°C |
| Package | 96-FBGA | FBGA96 |
| Mounting Type | Surface Mount | Surface Mount |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Burst Length | 8 (BL8) / 4 (BC4) | β |
| Number of Banks | 16 | β |
| Row Address Bits | 16 | β |
| Column Address Bits | 10 | β |
| Interface | Differential (CK, /CK) | DDR4 |
| RoHS Status | Compliant | Compliant |
| JEDEC Standard | JEDEC DDR4 | β |
| Supply Voltage | β | 1.2 V |
| Pin Count | β | 96 |
| Industrial Grade | β | Yes |
| Compatible with | β | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B |
| Data Bus Width | β | 16 bits |
| Refresh | β | Auto-refresh |