K4A8G165WC-BCWE vs YZ48G16V-F9HPI-M Comparison
Detailed side-by-side comparison of K4A8G165WC-BCWE by Samsung Electronics and YZ48G16V-F9HPI-M by Loongtion. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ Active
Specification Comparison
| Parameter | K4A8G165WC-BCWE | YZ48G16V-F9HPI-M |
|---|---|---|
| Brand | Samsung Electronics | Loongtion |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $38.00 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| Operating Temperature Range | 0°C to +95°C | -40°C to +85°C |
| Package | 96-FBGA | FBGA96 |
| Mounting Type | Surface Mount | Surface Mount |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8 (BL8) / 4 (BC4) | — |
| Number of Banks | 16 | — |
| Row Address Bits | 16 | — |
| Column Address Bits | 10 | — |
| Interface | Differential (CK, /CK) | DDR4 |
| RoHS Status | Compliant | Compliant |
| JEDEC Standard | JEDEC DDR4 | — |
| Supply Voltage | — | 1.2 V |
| Pin Count | — | 96 |
| Industrial Grade | — | Yes |
| Compatible with | — | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B |
| Data Bus Width | — | 16 bits |
| Refresh | — | Auto-refresh |