K4AAG165WA-BCWE vs K4AAG165WA-BCPB 对比
详细并排对比 K4AAG165WA-BCWE 出自 Samsung Electronics 和 K4AAG165WA-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG165WA-BCWE | K4AAG165WA-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $62.40 | $63.79 |
| 存储器类型 | DDR4 SDRAM | Volatile DRAM (DDR4 SDRAM) |
| 存储容量 | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| 电源电压 | 1.2 V | — |
| 封装 | 96-ball FBGA | FBGA-96 |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| 工作温度 | -40C to +95C | [DATA_NEEDED: operating temperature for BCPB grade] |
| 接口类型 | Parallel, DDR4 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Format | DRAM (Volatile) | DRAM |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | DDR4 |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | Tray |
| Product Status | Active | Active |
| Density | — | 16 Gb |
| 存储组织 | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |