K4B4G1646D-BPH90 vs W634GU6RB-12 对比
详细并排对比 K4B4G1646D-BPH90 出自 Samsung Electronics 和 W634GU6RB-12 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BPH90 | W634GU6RB-12 |
|---|---|---|
| 品牌 | Samsung Electronics | Winbond |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.60 | $9.50 |
| 存储器类型 | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| 存储组织 | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| 数据速率 | 2133 Mb/s per pin | 1600 MT/s |
| 电源电压 | 1.35V (DDR3L) | 1.35V |
| 封装 | 96FBGA | 96-VFBGA (7.5x13) |
| 工作温度 | 0°C to +85°C | -40°C to +95°C (12I), -40°C to +105°C (12J) |
| CAS 延迟 | Programmable up to 14 | — |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | Yes |
| RoHS Compliant | Yes | — |
| 存储容量 | — | 4Gbit |
| 接口 | — | Parallel |
| Clock Frequency | — | 933 MHz |
| Access Time | — | 20 ns |
| Speed Grade | — | DDR3L-1600 (11-11-11) |
| RoHS | — | Compliant |
| 安装类型 | — | Surface Mount |
| 引脚数 | — | 96 |