K4B4G1646D-BPH90 vs W634GU6RB-12 Comparison
Detailed side-by-side comparison of K4B4G1646D-BPH90 by Samsung Electronics and W634GU6RB-12 by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BPH90 | W634GU6RB-12 |
|---|---|---|
| Brand | Samsung Electronics | Winbond |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| Organization | 32M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Data Rate | 2133 Mb/s per pin | 1600 MT/s |
| Supply Voltage | 1.35V (DDR3L) | 1.35V |
| Package | 96FBGA | 96-VFBGA (7.5x13) |
| Operating Temperature | 0°C to +85°C | -40°C to +95°C (12I), -40°C to +105°C (12J) |
| CAS Latency | Programmable up to 14 | — |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | — |
| Memory Size | — | 4Gbit |
| Interface | — | Parallel |
| Clock Frequency | — | 933 MHz |
| Access Time | — | 20 ns |
| Speed Grade | — | DDR3L-1600 (11-11-11) |
| RoHS | — | Compliant |
| Mounting Type | — | Surface Mount |
| Number of Pins | — | 96 |