K4B4G1646D-BYH90 vs K4B4G1646E-BYK000 对比
详细并排对比 K4B4G1646D-BYH90 出自 Samsung Electronics 和 K4B4G1646E-BYK000 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BYH90 | K4B4G1646E-BYK000 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.80 | $0.56 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| 存储组织 | 512M x 16 | 256M x 16 |
| 数据速率 | 2133 Mbps/pin | — |
| 电源电压 | 1.35V (1.283V to 1.45V) | — |
| I/O Interface | x16 | — |
| Number of Banks | 8 | [DATA_NEEDED: bank count] |
| 封装 | 96-ball FBGA (TFBGA) | 96-FBGA (BYK) |
| Ball Pitch | 0.8 mm | — |
| 工作温度 | 0°C to +85°C | [DATA_NEEDED: operating temperature range] |
| CAS 延迟 | Programmable (e.g., 11, 12, 13) | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| On-Die Termination | Yes (ODT pin) | — |
| ZQ Calibration | Yes (240-ohm resistor to ground) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| 存储容量 | — | 4 Gbit |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| Clock Frequency | — | 800 MHz |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Die Process | — | Samsung E-die |
| 安装类型 | — | Surface Mount |
| 接口 | — | Parallel |
| 特性 | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| Access Time | — | 1.25 ns |