K4B4G1646E-BCNB vs K4B4G1646E-BYK0 对比
详细并排对比 K4B4G1646E-BCNB 出自 Samsung Electronics 和 K4B4G1646E-BYK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BCNB | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.52 | $1.80 |
| 存储器类型 | DDR3 SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gb | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) |
| 数据速率 | 1866 Mbps | DDR3-1600 (800 MHz) |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | 11 (CL-tRCD-tRP) |
| 工作温度 | 0C to +95C | 0°C to +95°C (TC) |
| 封装 | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | — |
| 引脚数 | 96 | — |
| 接口类型 | Parallel | — |
| Refresh | 8K / 64 ms | — |
| Burst Length | 8, 4 (fixed) | 8 (fixed), 4 (burst chop) |
| Write Recovery Time | [DATA_NEEDED: tWR] | — |
| Row Cycle Time | [DATA_NEEDED: tRC] | — |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | — |
| Row Precharge Time | [DATA_NEEDED: tRP] | — |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | — |
| Density | — | 4 Gb |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |