K4B4G1646E-BCNB vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646E-BCNB by Samsung Electronics and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ Active
Specification Comparison
| Parameter | K4B4G1646E-BCNB | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $13.52 | — |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) |
| Data Rate | 1866 Mbps | DDR3-1600 (800 MHz) |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 11 (CL-tRCD-tRP) |
| Operating Temperature | 0C to +95C | 0°C to +95°C (TC) |
| Package | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | — |
| Number of Pins | 96 | — |
| Interface Type | Parallel | — |
| Refresh | 8K / 64 ms | — |
| Burst Length | 8, 4 (fixed) | 8 (fixed), 4 (burst chop) |
| Write Recovery Time | [DATA_NEEDED: tWR] | — |
| Row Cycle Time | [DATA_NEEDED: tRC] | — |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | — |
| Row Precharge Time | [DATA_NEEDED: tRP] | — |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | — |
| Density | — | 4 Gb |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |